Shot noise measurements in NS junctions and the semiclassical theory

We present a new analysis of shot noise measurements in normal metal-superconductor (NS) junctions [X. Jehl et al., Nature 405, 50 (2000)], based on a recent semiclassical theory. The first calculations at zero temperature assuming quantum coherence predicted shot noise in NS contacts to be doubled with respect to normal contacts. The semiclassical approach gives the first opportunity to compare data and theory quantitatively at finite voltage and temperature. The doubling of shot noise is predicted up to the superconducting gap, as already observed, confirming that phase coherence is not necessary. An excellent agreement is also found above the gap where the noise follows the normal case.Comment: 2 pages, revtex, 2 eps figures, to appear in Phys. Rev.

Nonlocal effects in the shot noise of diffusive superconductor - normal-metal systems

A cross-shaped diffusive system with two superconducting and two normal electrodes is considered. A voltage $eV < \Delta$ is applied between the normal leads. Even in the absence of average current through the superconducting electrodes their presence increases the shot noise at the normal electrodes and doubles it in the case of a strong coupling to the superconductors. The nonequilibrium noise at the superconducting electrodes remains finite even in the case of a vanishingly small transport current due to the absence of energy transfer into the superconductors. This noise is suppressed by electron-electron scattering at sufficiently high voltages.Comment: 4 pages, RevTeX, 2 eps figure

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic SETs. The period of the Coulomb oscillations is set by the gate capacitance of the transistor and therefore controlled by lithography. The source and drain capacitances have also been characterized. This design could be used to build more complex SET devices.Comment: to be published in Applied Physics Letter

Positive cross-correlations induced by ferromagnetic contacts

Due to the Fermionic nature of carriers, correlations between electric currents flowing through two different contacts attached to a conductor present a negative sign. Possibility for positive cross-correlations has been demonstrated in hybrid normal/superconductor structures under certain conditions. In this paper we show that positive cross-correlations can be induced, if not already present, in such structures by employing ferromagnetic leads with magnetizations aligned anti-parallel to each other. We consider three-terminal hybrid structures and calculate the mean-square correlations of current fluctuations as a function of the bias voltage at finite temperature.Comment: 6 pages, 5 figures; accepted version by PRB, figures replace

Design and cryogenic operation of a hybrid quantum-CMOS circuit

Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for larger dimensions, allowing to design integrated circuits. Using the same process, we have co-integrated a FET-based ring oscillator circuit operating at cryogenic temperature which generates a radio-frequency (RF) signal on the gate of a nanoscale device showing Coulomb oscillations. We observe rectification of the RF signal, in good agreement with modeling

A hybrid metal/semiconductor electron pump for quantum metrology

Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of the ampere. Furthermore, they are essential for closing the quantum metrological triangle experiment which tests for possible corrections to the quantum relations linking e and h, the electron charge and the Planck constant, to voltage, resistance and current. We present here single-island hybrid metal/semiconductor transistor pumps which combine the simplicity and efficiency of Coulomb blockade in metals with the unsurpassed performances of silicon switches. Robust and simple pumping at 650MHz and 0.5K is demonstrated. The pumped current obtained over a voltage bias range of 1.4mV corresponds to a relative deviation of 5e-4 from the calculated value, well within the 1.5e-3 uncertainty of the measurement setup. Multi-charge pumping can be performed. The simple design fully integrated in an industrial CMOS process makes it an ideal candidate for national measurement institutes to realize and share a future quantum ampere

A tunable, dual mode field-effect or single electron transistor

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel